AT26DF081A
12. Electrical Specifications
12.1
Absolute Maximum Ratings*
Temperature under Bias ..................................-55 ? C to +125 ? C
Storage Temperature .......................................-65 ? C to +150 ? C
All Input Voltages
(including NC Pins)
with Respect to Ground .....................................-0.6V to +4.1V
All Output Voltages
with Respect to Ground .............................-0.6V to V CC + 0.5V
12.2
DC and AC Operating Range
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
AT26DF081A
Operating Temperature (Case)
V CC Power Supply
12.3
DC Characteristics
Ind.
-40 ? C to 85 ? C
2.7V to 3.6V
Symbol
I SB
I DPD
Parameter
Standby Current
Deep Power-down Current
Condition
CS, WP, HOLD = V CC ,
all inputs at CMOS levels
CS, WP, HOLD = V CC ,
all inputs at CMOS levels
Min
Typ
25
25
Max
35
35
Units
μA
μA
f = 70 MHz; I OUT = 0 mA;
CS = V IL , V CC = Max
f = 66 MHz; I OUT = 0 mA;
CS = V IL , V CC = Max
11
10
16
15
I CC1
Active Current, Read Operation
f = 50 MHz; I OUT = 0 mA;
CS = V IL , V CC = Max
9
14
mA
f = 33 MHz; I OUT = 0 mA;
CS = V IL , V CC = Max
f = 20 MHz; I OUT = 0 mA;
CS = V IL , V CC = Max
8
7
12
10
I CC2
I CC3
I LI
I LO
Active Current, Program Operation
Active Current, Erase Operation
Input Leakage Current
Output Leakage Current
CS = V CC , V CC = Max
CS = V CC , V CC = Max
V IN = CMOS levels
V OUT = CMOS levels
12
14
18
20
1
1
mA
mA
μA
μA
V IL
V IH
Input Low Voltage
Input High Voltage
0.7 x V CC
0.3 x V CC
V
V
V OL
V OH
Output Low Voltage
Output High Voltage
I OL = 1.6 mA; V CC = Min
I OH = -100 μA
V CC - 0.2V
0.4
V
V
31
3600G–DFLASH–06/09
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